Mitsubishi Electric Corporation (TOKYO:6503) announced today the coming launch of its T-series 2.0kV Insulated Gate Bipolar Transistor (IGBT) Module for Industrial Use, the world’s first IGBT1 with 2.0kV withstand voltage, on June 30. The module is ideally suited to increase the efficiency and reduce the size of renewable-energy power converters, which are in high demand due to the growing use of renewable-energy power supplies. The module will be exhibited at the Applied Power Electronics Conference (APEC) 2021 Virtual Exposition from June 15 to 16.
1 According to Mitsubishi Electric research as of June 9, 2021
Product Features
1) World-first IGBT with 2.0kV withstand voltage for more compact DC1500V power converters
2) 7th-generation IGBT and RFC diodes help reduce power loss in power converters
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